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| BS807 N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features * * * * * High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 A D TOP VIEW G E D G H K J L M S B C Dim A B C D E G H J K L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 Mechanical Data * * * * * Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202 Method 208 Pin Connection: See Diagram Marking: S07 Weight: 0.008 grams (approx.) All Dimensions in mm Maximum Ratings Drain-Source Voltage Drain-Gate Voltage @ TA = 25C unless otherwise specified Symbol VDSS VDGS VGS ID Pd Tj, TSTG Value 200 200 20 100 310 -55 to +150 Unit V V V mA mW C Characteristic Gate-Source Voltage (pulsed) (Note 2) Drain Current (continuous) Power Dissipation @ TC = 50C (Note 1) Operating and Storage Temperature Range Inverse Diode @ TA = 25C unless otherwise specified Characteristic Symbol IF VF Value 0.3 0.85 Unit A V Max Forward Current (continuous) Forward Voltage Drop (typ) @ VGS = 0, IF = 0.3A, Tj = 25C Notes: 1. Device mounted on ceramic substrate 0.7mm x 2.5cm2 area. 2. Pulse test: Pulse width = 80s, duty cycle = 1%. DS11301 Rev. D-3 1 of 3 BS807 Electrical Characteristics Characteristic Drain-Source Breakdown Voltage Gate-Body Leakage Current Drain-Source Cutoff Current Gate-Source Threshold Voltage Drain-Source ON Resistance @ TA = 25C unless otherwise specified Symbol V(BR)DSS IGSS IDSS IDSX VGS(th) rDS(ON) RqJSB RqJA Ciss Coss Crss Min 200 -- -- -- -- -- -- -- Typ 230 -- -- 1.8 18 -- -- 58 8.0 1.5 Max -- 10 30 1.0 3.0 28 320 400 -- Unit V nA nA A V W K/W K/W pF Test Condition ID = 100A, VGS = 0 VGS = 15V, VDS = 0 VDS = 130V, VGS =0 VDS = 70V, VGS = 0.2V VGS = VDS, ID = 1.0mA VGS = 2.8V, ID = 20 mA Note 1 Note 1 VDS = 20V,VGS = 0,f = 1.0 MHz Thermal Resistance, Junction to Substrate Backside Thermal Resistance, Junction to Ambient Air Input Capacitance Output Capacitance Feedback Capacitance Notes: 1. Device mounted on ceramic substrate 0.7mm x 2.5cm2 area. 2. Pulse test: Pulse width = 80s, duty cycle = 1%. DS11301 Rev. D-3 2 of 3 BS807 500 See Note 1 500 See Note 2 TA = 25 C ID(ON), DRAIN ON-CURRENT (mA) Pd, POWER DISSIPATION (mW) 400 400 VGS = 4V 300 300 3.5 200 200 3 100 100 2.5 0 0 100 TSB, SUBSTRATE TEMPERATURE ( C) Fig. 1, Power Derating Curve 200 0 0 20 40 60 2 80 100 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2, Output Characteristics 1.0 See Note 2 VDS = 25V TA = 25 C 500 See Note 2 TA = 25 C ID(ON), DRAIN ON-CURRENT (mA) 400 0.8 300 3.5 ID, DRAIN CURRENT (A) 10 VGS = 4V 0.6 200 3 0.4 100 2.5 0.2 0 0 2 4 6 2 8 0 0 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 4, Drain Current vs Gate-Source Voltage 500 VDS = 25V See Note 2 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 3, Saturation Characteristics 500 VDS = 25V gfs, TRANSCONDUCTANCE (mm) 400 gfs, TRANSCONDUCTANCE (mm) See Note 2 400 300 300 200 200 100 100 0 0 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 5, Transconductance vs Gate-Source Voltage 0 0 100 ID, DRAIN CURRENT (mA) Fig. 6, Transconductance vs Drain Current 200 DS11301 Rev. D-3 3 of 3 BS807 |
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